to-126 plastic-encapsulate transistors ALJ13003 transistor (npn) maximum ratings(ta=25 unless otherwise noted ) maxi parameter value units vcbo collector-base voltage 600 v vceo collector-emitter voltage 400 v vebo emitter-base voltage 9 v ic collector current 1.5 a pc collector power dissipation 50 w tj junction temperature 150 tstg storag temperature -55 150 electrical characteristics(tamb=25 unless otherwise specjfied): parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo i c =100ua, i e =0 600 v collector-emittre breakdown?voltage v(br) ceo i c =1ma, i b =0 400 v emitter-base breakdown voltage v(br) ebo i c =100ua, i c =0 9 v collector cut-off current i cbo v cb =600v, i e =0 0.1 ? emitter cut-off current i ebo v eb =9v i c =0 0.1 ? dc current gain h fe vce=5v ic=200ma 15 30 collector-emitter saturation voltage vce(sat) ic=1.0a,ib=0.25a 0.9 v base-emitter saturation voltage vbe(sat) ic=1.0a,ib=0.25a 1.2 v storage time ts 2.0 6.0 us rising time tr 1 us fall time tf ui9600 ic=0.25a 1 us transition frequency ft vce=10v,ic=0.1a,f=1mhz 5 mhz copyright?2004 ??e???e?t1??? ?icp?o?1009689o? 1?????:??e??????a??a|?a???a1919 ?:86-755-83742999 ???:86-755-83743999 email:sales@szlongjing.com :518031 ??e???e?t1???
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